Netac 16GB DDR4 3200MHz SODIMM System Memory (No Heatsink)
Enhance your system performance with the Netac 16GB DDR4 3200MHz SODIMM memory module. Designed for use as main memory in mobile personal computers, this unbuffered small outline DDR4 SDRAM module delivers high-speed operation with low power consumption.
Key Features
- 16GB capacity (1 x 16GB)
- DDR4-3200MHz high-speed performance
- 260-pin SODIMM form factor
- Unbuffered, Non-ECC design
- Working voltage: 1.2V
- Gold edge contacts
- RoHS compliant and halogen-free
- Intended for use as main memory in systems such as mobile personal computers
- No heatsink
Advanced DDR4 Technology
- Low power, high-speed DDR4 SDRAM devices
- Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- On-board I2C serial presence-detect (SPD) EEPROM
- Fixed burst chop (BC) of 4 and burst length (BL) of 8 via mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Databus write cyclic redundancy check (CRC)
- Temperature controlled refresh (TCR)
- Command/Address (CA) parity
- Per DRAM addressability support
- 8-bit pre-fetch
- Fly-by topology
- Command/Address latency (CAL)
- Terminated control command and address bus
Specifications
| Specification | Detail |
|---|---|
| Brand | Netac |
| Capacity | 16GB (1 x 16GB) |
| Memory Type | DDR4 |
| Module Type | SODIMM |
| Memory Speed | DDR4-3200MHz |
| Pin Configuration | 260-pin |
| Registered/Unbuffered | Unbuffered |
| Error Correction | Non-ECC |
| CL-tRCD-tRP-tRAS | 22-22-22-52 |
| Working Voltage | 1.2V |
| Power Supply (VDD) | 1.2V (1.14V to 1.26V) |
| VDDQ | 1.2V (1.14V to 1.26V) |
| VPP | 2.5V (2.375V to 2.75V) |
| VDDSPD | 2.25V to 3.6V |
| PCB Height | 1.18" (30.00mm) |
| Contacts | Gold contact fingers / gold edge contacts |
| Compliance | RoHS compliant, halogen-free |
| Heatsink | No heatsink |
Netac Unbuffered Small Outline DDR4 SDRAM DIMMs are engineered for efficient, high-speed operation, making them an excellent choice for upgrading the main memory of compatible mobile personal computers.
